november 20 11 ? 20 11 fairchild semiconductor corporation fdd5670 rev b 2 fdd5670 60v n-channel powertrench ? ? ? ? mosfet general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds( on) and fast switching speed. extremely low r ds(on) in a small package. applications ? dc/dc converter ? motor drives features ? 52 a, 60 v r ds(on) = 15 m @ v gs = 10 v r ds(on) = 18 m @ v gs = 6 v ? low gate charge ? fast switching ? high performance trench technology for extremely low r ds(on) g s d to-252 s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 60 v v gss gate-source voltage 20 v i d drain current C continuous (note 3) 52 a C pulsed (note 1a) 150 power dissipation for single operation (note 1) 83 (note 1a) 3.8 p d (note 1b) 1.6 w t j , t stg operating and storage junction temperature range -55 to +175 c thermal characteristics r jc thermal resistance, junction-to-case (note 1) 1.8 c/w r ja thermal resistance, junction-to-ambient (note 1a) 40 c/w r ja thermal resistance, junction-to-ambient (note 1b) 96 c/w package marking and ordering information device marking device reel size tape width quantity fdd5670 fdd5670 13 16mm 2500 units fdd5670
fdd5670 rev. b 2 ) on ( ds d r p electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss drain-source avalanche energy single pulse, v dd = 20 v, i d = 10a 360 mj i ar drain-source avalanche current 10 a off characteristics bv dss drainCsource breakdown voltage v gs = 0 v, i d = 250 a 60 v bv dss === t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 53 mv/ c i dss zero gate voltage drain current v ds = 48 v, v gs = 0 v 1 a i gssf gateCbody leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gateCbody leakage, reverse v gs = C20 v, v ds = 0 v C100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 22.54 v v gs(th) === t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c C6 mv/ c r ds(on) static drainCsource onCresistance v gs = 10 v, i d = 10 a v gs = 6 v, i d = 9 a v gs = 10 v, i d = 10 a, t j = 125 c 12 14 19 15 18 26 m i d(on) onCstate drain current v gs = 10 v, v ds = 5 v 60 a g fs forward transconductance v ds = 5 v, i d = 10 a 27 s dynamic characteristics c iss input capacitance 2739 pf c oss output capacitance 441 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 182 pf switching characteristics (note 2) t d(on) turnCon delay time 20 32 ns t r turnCon rise time 12 24 ns t d(off) turnCoff delay time 60 95 ns t f turnCoff fall time v dd = 30 v, i d = 1 a, v gs = 10 v, r gen = 6 24 38 ns q g total gate charge 52 73 nc q gs gateCsource charge 10 nc q gd gateCdrain charge v ds = 15 v, i d = 10 a, v gs = 10 v 13 nc drainCsource diode character istics and maximum ratings v sd drainCsource diode forward voltage v gs = 0 v, i s = 3.5 a (note 2) 0.74 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja = 40c/w when mounted on a 1in 2 pad of 2 oz copper scale 1 : 1 on letter size paper b) r ja = 96c/w when mounted on a minimum pad. 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. maximum current is calculated as: where p d is maximum power dissipation at t c = 25c and r ds(on) is at t j(max) and v gs = 10v. package current limitation is 21a fdd5670
fdd5670 rev. b 2 typical characteristics 0 10 20 30 40 50 60 01234 v ds , drain-source voltage (v) i d , drain current (a ) 4.0v 5.0v 4.5v v gs = 10v 6.0v 3.5v 0.8 1 1.2 1.4 1.6 1.8 2 0 102030405060 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 4.0v 7.0v 6.0v 10v 5.0v 4.5v figure 1. on-region characteristics. figur e 2. on-resistance variation with drain current and gate voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d =10a v gs = 10v 0 0.01 0.02 0.03 0.04 0.05 345678910 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 10 a t a = 125 o c t a = 25 o c figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 60 22.533.544.55 v gs , gate to source voltage (v) i d , drain current (a ) t a = -55 o c 25 o c v ds = 5v 125 o c 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a ) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer c haracteristics. figure 6. body diode forward voltage variation with source current and temperature. fdd5670
fdd5670 rev. b 2 typical characteristics 0 2 4 6 8 10 0 102030405060 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 11a v ds = 10v 30v 20v 0 1000 2000 3000 4000 5000 0 102030405060 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain -source voltage (v) i d , drain current (a) dc 100ms 100 s r ds(on) limit v gs = 10v single pulse r ja = 96 o c/w t c = 25 o c 10ms 1ms 10s 1s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 96c/w t c = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resist ance r jc (t) = r(t) x r jc r ja = 96 c/w t j - t c = p x r jc (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fdd5670
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? tm ? tm ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporations anti-c ounterfeiting policy. fairchilds anti-counter feiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have fu ll traceability, meet fairchilds quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i58
|
